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 Ordering number:EN3141A
NPN Epitaxial Planar Silicon Transistors
2SC4522
High-Speed Switching Applications
Features
* Adoption of FBET, MBIT process. * Large current capacity. * Low collector-to-emitter saturation voltage. * Fast switching speed.
Package Dimensions
unit:mm 2045B
[2SC4522]
1.5
6.5 5.0 4
2.3 0.5
0.85 0.7
0.8 1.6
5.5
7.0
1.2
0.6
0.5
1
2
3
1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP
2.3
2.3
unit:mm 2044B
[2SC4522]
6.5 5.0 4 2.3
1.5
7.5
0.5
5.5
7.0
0.85 1 0.6
0.8
0.5 2 3
2.5
1.2
1.2 0~0.2
1 : Base 2 : Collector 3 : Emitter 4 : Collector SANYO : TP-FA
2.3
2.3
Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein.
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquaters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
11299HA (KT)/7130MH/7059MO, TS No.3141-1/4
2SC4522 Specifications
Absolute Maximum Ratings at Ta = 25C
Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP PC Conditions Ratings 60 45 5 5 8 1 Unit V V V A A W W
Tc=25C
Tj Tstg
15 150 -55 to +150
C C
Electrical Characteristics at Ta = 25C
Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Turn-ON Time Storage Time Fall Time Symbol ICBO IEBO hFE1 hFE2 fT Cob VCE(sat) VBE(sat) VCB=45V, IE=0 VEB=2V, IC=0 VCE=2V, IC=500mA VCE=2V, IC=5A VCE=2V, IC=500mA VCB=10V, f=1MHz IC=2.5A, IB=125mA IC=2.5A, IB=125mA 60 45 5 50 150 180 100 270 350 100* 40 300 40 0.25 0.95 0.7 1.3 MHz pF V V V V V ns ns ns Conditions Ratings min typ max 1 10 400* Unit A A
V(BR)CBO IC=100A, IE=0 V(BR)CEO IC=1mA, RBE= V(BR)EBO ton tstg tf IE=100A, IC=0 See specified test circuit. See specified test circuit. See specified test circuit.
* : The 2SC4522 is classified by 500mA hFE as follows :
100 R 200 140 S 280 200 T 400
Switching Time Test Circuit
No.3141-2/4
2SC4522
No.3141-3/4
2SC4522
Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.
This catalog provides information as of January, 1999. Specifications and information herein are subject to change without notice.
PS No.3141-4/4


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